| PART |
Description |
Maker |
| CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| ZXTP05120HFF ZXTP05120HFFTA |
120V, SOT23F, PNP medium power Darlington transistor
|
Diodes Incorporated
|
| FZT694B-16 |
120V NPN MEDIUM POWER HIGH GAIN TRANSISTOR
|
Diodes Incorporated
|
| 2SD1953 0771 |
NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications
From old datasheet system
NPN Epitaxial Planar Silicon Transistors for 120V/1.5A Driver Applications(120V/1.5A驱动器应用的NPN硅外延平面型晶体
|
Sanyo Electric Co.,Ltd.
|
| CJF15028 |
36.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE.
|
Continental Device India Limited
|
| 2SD733 2SD733K 2SB697 2SB697K 2SD718O |
ER 14C 14#16 PIN RECP BOX 对于使用自动对焦功率放大
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 8A I(C) | TO-247VAR
For AF Power Amplifier Use
|
Unknow
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| 2SA1358Y 2SA1358 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126VAR 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1A条一（c）|26VAR
|
TOSHIBA
|
| 2SA1696D 2SA1696C 2SC4473E |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 400MA I(C) | SOT-186
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 400MA I(C) | SOT-186 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 400mA的一（c）|的SOT - 186
|
Mospec Semiconductor, Corp.
|
| SMART1050-15 |
SmartPro 120V 1.05kVA 705W Line-Interactive UPS,Tower, 120V, USB port
|
Tripp Lite. All Rights ...
|
